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| Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description The AP2121 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit circuit for current protection and a chip enable circuit (5-pin products only). The AP2121 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. The AP2121 series have 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.2V and 3.3V versions. The AP2121 are available in standard SOT-23-3 and SOT-23-5 packages. AP2121 Features * * * * * * * * * * * Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.5V Version) Low Standby Current: 0.1A Typical Low Quiescent Current: 25A Typical High Ripple Rejection: 70dB Typical f=10kHz Maximum Output Current: More Than 150mA (300mA Limit) Extremely Low Noise: 30Vrms (10Hz to 100kHz) Excellent Line Regulation: 4mV Typical Excellent Load Regulation: 12mV Typical High Output Voltage Accuracy: 2% Excellent Line Transient Response and Load Transient Response Compatible with Low ESR Ceramic Capacitor (as Low as 1F) Applications * * * * * * Mobile Phones, Cordless Phones Wireless Communication Equipment Portable Games Cameras, Video Recorders Sub-board Power Supplies for Telecom Equipment Battery Powered Equipment SOT-23-3 SOT-23-5 Figure 1. Package Types of AP2121 Mar. 2007 Rev. 1. 4 1 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Pin Configuration AP2121 N Package (SOT-23-3) VIN VIN 2 VOUT GND CE GND K Package (SOT-23-5) 3 1 1 2 3 5 VOUT 4 NC Figure 2. Pin Configuration of AP2121 (Top View) Pin Description Pin Number Pin Name SOT-23-3 3 1 SOT-23-5 1 2 3 4 2 5 VIN GND CE NC VOUT Input voltage Ground Active high enable input pin. Logic high=enable, logic low=shutdown No connection Regulated output voltage Function Mar. 2007 Rev. 1. 4 2 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Functional Block Diagram AP2121 VIN 3 2 VOUT VIN 1 5 VOUT VREF VREF CURRENT LIMIT CURRENT LIMIT 1 GND CE 3 2 GND SOT-23-3 SOT-23-5 Figure 3. Functional Block Diagram of AP2121 Mar. 2007 Rev. 1. 4 3 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Ordering Information AP2121 AP2121 E1: Lead Free Circuit Type TR: Tape and Reel A: Active High (Pull-down resistor built-in) Blank: No Enable Function Package N: SOT-23-3 K: SOT-23-5 1.5: 1.8: 2.5: 2.8: 3.0: 3.2: 3.3: Fixed Output 1.5V Fixed Output 1.8V Fixed Output 2.5V Fixed Output 2.8V Fixed Output 3.0V Fixed Output 3.2V Fixed Output 3.3V Package Temperature Range Condition Part Number AP2121N-1.5TRE1 AP2121N-1.8TRE1 AP2121N-2.5TRE1 Marking ID EF1 EF3 EF4 EF5 EF6 EF7 EF8 E1Z E1U E1V E1W E1X E3Z E1Y Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel SOT-23-3 -40 to 85oC AP2121N-2.8TRE1 AP2121N-3.0TRE1 AP2121N-3.2TRE1 AP2121N-3.3TRE1 Active High (Pull-down resistor built-in) AP2121AK-1.5TRE1 Active High (Pull-down resistor built-in) AP2121AK-1.8TRE1 Active High (Pull-down resistor built-in) AP2121AK-2.5TRE1 SOT-23-5 -40 to 85oC Active High (Pull-down resistor built-in) AP2121AK-2.8TRE1 Active High (Pull-down resistor built-in) AP2121AK-3.0TRE1 Active High (Pull-down resistor built-in) AP2121AK-3.2TRE1 Active High (Pull-down resistor built-in) AP2121AK-3.3TRE1 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Mar. 2007 Rev. 1. 4 4 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Absolute Maximum Ratings (Note 1) Parameter Input Voltage Enable Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Symbol VIN VCE IOUT TJ TSTG TLEAD JA ESD ESD SOT-23-3 SOT-23-5 2000 200 Value 6.5 -0.3 to VIN+0.3 300 150 -65 to 150 260 250 250 oC/W AP2121 Unit V V mA o C oC oC Thermal Resistance (Note 2) ESD (Human Body Model) ESD (Machine Model) V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, JA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/JA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TJ Min 2 -40 Max 6 85 Unit V oC Mar. 2007 Rev. 1. 4 5 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics AP2121-1.5 Electrical Characteristics (VIN=2.5V, TJ=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=2.5V 1mAIOUT80mA 2.3VVIN6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Resistance RPD IQ ISTD PSRR VOUT/T (VOUT/VOUT)/T ILIMIT VNOISE VIN=2.5V, IOUT=0mA VIN=2.5V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=2.5V IOUT=30mA VOUT=0V TA=25 C 10Hz f100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2121 Conditions VIN=2.5V 1mAIOUT30mA Min 1.47 Typ 1.5 Max 1.53 6 Unit V V mA 150 12 4 400 400 400 25 0.1 70 40 16 600 600 600 50 1 mV mV mV A A dB V/oC ppm/oC mA 150 100 50 30 Vrms V V M Mar. 2007 Rev. 1. 4 6 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2121-1.8 Electrical Characteristics (VIN=2.8V, TJ=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=2.8V 1mAIOUT80mA 2.3VVIN6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Resistance RPD IQ ISTD PSRR VOUT/T (VOUT/VOUT)/T ILIMIT VNOISE VIN=2.8V, IOUT=0mA VIN=2.8V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=2.8V IOUT=30mA VOUT=0V TA=25 C 10Hz f100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2121 Conditions VIN=2.8V 1mAIOUT30mA Min 1.764 Typ 1.8 Max 1.836 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV A A dB V/oC ppm/oC mA 180 100 50 30 Vrms V V M Mar. 2007 Rev. 1. 4 7 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2121-2.5 Electrical Characteristics (VIN=3.5V, TJ=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=3.5V 1mAIOUT80mA 3VVIN6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Resistance RPD IQ ISTD PSRR VOUT/T (VOUT/VOUT)/T ILIMIT VNOISE VIN=3.5V, IOUT=0mA VIN=3.5V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=3.5V IOUT=30mA VOUT=0V TA=25 C 10Hz f100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2121 Conditions VIN=3.5V 1mAIOUT30mA Min 2.45 Typ 2.5 Max 2.55 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV A A dB V/oC ppm/oC mA 250 100 50 30 Vrms V V M Mar. 2007 Rev. 1. 4 8 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2121-2.8 Electrical Characteristics (VIN=3.8V, TJ=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=3.8V 1mAIOUT80mA 3.3VVIN6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Resistance RPD IQ ISTD PSRR VOUT/T (VOUT/VOUT)/T ILIMIT VNOISE VIN=3.8V, IOUT=0mA VIN=3.8V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=3.8V IOUT=30mA VOUT=0V TA=25 C 10Hz f100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2121 Conditions VIN=3.8V 1mAIOUT30mA Min 2.744 Typ 2.8 Max 2.856 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV A A dB V/oC ppm/oC mA 280 100 50 30 Vrms V V M Mar. 2007 Rev. 1. 4 9 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2121-3.0 Electrical Characteristics (VIN=4V, TJ=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=4V 1mAIOUT80mA 3.5VVIN6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Resistance RPD IQ ISTD PSRR VOUT/T (VOUT/VOUT)/T ILIMIT VNOISE VIN=4V, IOUT=0mA VIN=4V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=4V IOUT=30mA VOUT=0V TA=25oC 10Hz f100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 150 12 40 Conditions VIN=4V 1mAIOUT30mA Min 2.94 Typ 3.0 Max 3.06 6 Unit V V mA mV AP2121 Line Regulation 4 20 150 200 25 0.1 70 16 40 300 400 50 1 mV mV A A dB V/oC ppm/oC mA 300 100 50 30 Vrms V V M Mar. 2007 Rev. 1. 4 10 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2121-3.2 Electrical Characteristics (VIN=4.2V, TJ=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=4.2V 1mA IOUT 80mA 3.7VVIN6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Resistance RPD IQ ISTD PSRR VOUT/T (VOUT/VOUT)/T ILIMIT VNOISE VIN=4.2V, IOUT=0mA VIN=4.2V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=4.2V IOUT=30mA VOUT=0V TA=25 C 10Hz f100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2121 Conditions VIN=4.2V 1mAIOUT30mA Min 3.136 Typ 3.2 Max 3.264 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV A A dB V/oC ppm/oC mA 320 100 50 30 Vrms V V M Mar. 2007 Rev. 1. 4 11 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2121-3.3 Electrical Characteristics (VIN=4.3V, TJ=25oC, CIN=1F, COUT=1F, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Output Current Load Regulation Line Regulation Symbol VOUT VIN IOUT VRLOAD VRLINE VIN-VOUT=1V VIN=4.3V 1mA IOUT 80mA 3.8VVIN6V IOUT=30mA IOUT=10mA Dropout Voltage VDROP IOUT=100mA IOUT=150mA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise CE "High" Voltage CE "Low" Voltage CE Pull-down Resistance RPD IQ ISTD PSRR VOUT/T (VOUT/VOUT)/T ILIMIT VNOISE VIN=4.3V, IOUT=0mA VIN=4.3V VCE in OFF mode Ripple 0.5Vp-p, f=10kHz VIN=4.3V IOUT=30mA VOUT=0V TA=25 C 10Hz f100kHz CE input voltage "High" CE input voltage "Low" 2.5 5 1.5 0.25 10 o AP2121 Conditions VIN=4.3V 1mAIOUT30mA Min 3.234 Typ 3.3 Max 3.366 6 Unit V V mA 150 12 4 20 150 200 25 0.1 70 40 16 40 300 400 50 1 mV mV mV A A dB V/oC ppm/oC mA 330 100 50 30 Vrms V V M Mar. 2007 Rev. 1. 4 12 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics AP2121 3.5 1.5 3.0 1.2 Output Voltage (V) Output Voltage (V) 2.5 AP2121-3.0 VIN=3.3V VIN=4V VIN=6V 0.9 2.0 1.5 0.6 AP2121-1.5 VIN=2V VIN=2.5V VIN=3V 1.0 0.3 0.5 0.0 0 50 100 150 200 250 300 350 0.0 0 50 100 150 200 250 300 350 Output Current (mA) Output Current (mA) Figure 4. Output Voltage vs. Output Current Figure 5. Output Voltage vs. Output Current 3.50 1.50 3.25 1.25 Output Voltage (V) Output Voltage (V) 3.00 1.00 2.75 0.75 0.50 2.50 0.25 AP2121-1.5 IOUT=30mA 2.25 AP2121-3.0 IOUT=30mA 0.00 0 1 2 3 4 5 6 7 2.00 0 1 2 3 4 5 6 7 Input Voltage (V) Input Voltage (V) Figure 6. Output Voltage vs. Input Voltage Figure 7. Output Voltage vs. Input Voltage Mar. 2007 Rev. 1. 4 13 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2121 0.6 0.6 0.5 0.5 Dropout Voltage (V) Dropout Voltage (V) 0.4 0.4 0.3 Minimum Operating Requirement 0.3 0.2 0.2 0.1 AP2121-1.5 0.1 AP2121-3.0 0.0 0 40 80 120 160 200 0.0 0 40 80 120 160 200 Output Current (mA) Output Current (mA) Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current 1.60 1.58 1.56 3.10 3.08 3.06 Output Voltage (V) Output Voltage (V) 1.54 1.52 1.50 1.48 1.46 1.44 1.42 1.40 -25 0 25 50 75 o 3.04 3.02 3.00 2.98 2.96 2.94 2.92 AP2121-1.5 VIN=2.5V IOUT=30mA 100 125 AP2121-3.0 VIN=4V IOUT=30mA -25 0 25 50 75 o 2.90 100 125 Junction Temperature ( C) Junction Temperature ( C) Figure 10. Output Voltage vs. Junction Temperature Figure 11. Output Voltage vs. Junction Temperature Mar. 2007 Rev. 1. 4 14 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2121 60 60 50 50 Supply Current (A) Supply Current (A) 40 40 30 30 20 20 10 AP2121-1.5 IOUT=0mA 10 AP2121-3.0 IOUT=0mA 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 Input Voltage (V) Input Voltage (V) Figure 12. Supply Current vs. Input Voltage Figure 13. Supply Current vs. Input Voltage 40 35 30 40 35 30 Supply Current (A) Supply Current (A) 25 20 15 10 5 0 -25 0 25 50 75 o 25 20 15 10 5 0 AP2121-1.5 VIN=2.5V IOUT=0mA 100 125 AP2121-3.0 VIN=4V IOUT=0mA -25 0 25 50 o 75 100 125 Junction Temperature ( C) Junction Temperature ( C) Figure 14. Supply Current vs. Junction Temperature Figure 15. Supply Current vs. Junction Temperature Mar. 2007 Rev. 1. 4 15 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2121 VIN (1V/Div) AP2121-1.5 VIN (1V/Div) 4.5 3.5 2.5 6 5 4 AP2121-3.0 VOUT (0.05V/Div) VOUT (0.05V/Div) 0.05 0 -0.05 0.05 0 -0.05 Time (40s/Div) Time (20s/Div) Figure 16. Line Transient (Conditions: IOUT=30mA, CIN=1F, COUT=1F) Figure 17. Line Transient (Conditions: IOUT=30mA, CIN=1F, COUT=1F) VOUT (0.1V/Div) VOUT (0.1V/Div) 1.6 1.5 1.4 AP2121-1.5 3.1 3.0 2.9 AP2121-3.0 IOUT (100mA/Div) IOUT (50mA/Div) 100 50 0 200 100 0 Time (200s/Div) Time (200s/Div) Figure 18. Load Transient (Conditions: VIN=2.5V, CIN=1F, COUT=1F) Figure 19. Load Transient (Conditions: VIN=4V, CIN=1F, COUT=1F) Mar. 2007 Rev. 1. 4 16 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2121 100 100 AP2121-1.5 VIN=2.5V 80 90 80 70 AP2121-3.0 VIN=4V IOUT=30mA CIN=COUT=1F IOUT=30mA CIN=COUT=1F PSRR (dB) PSRR (dB) 100 1k 10k 100k 1M 60 60 50 40 30 40 20 20 10 0 10 0 10 100 1k 10k 100k Frequency (Hz) Frequency (Hz) Figure 20. PSRR vs. Frequency Figure 21. PSRR vs. Frequency Mar. 2007 Rev. 1. 4 17 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Typical Application AP2121 VIN=2.5V AP2121-1.5 VIN VOUT VOUT=1.5V VIN VOUT GND CIN 1F COUT 1F VIN=4V AP2121-3.0 VIN GND CE CIN 1F VOUT=3V VIN VOUT VOUT NC COUT 1F Note: Filter capacitors are required at the AP2121's input and output. 1F capacitor is required at the input. The minimum output capacitance required for stability should be more than 1F with ESR from 0.01 to 100. Ceramic capacitors are recommended. Figure 22. Typical Application of AP2121 Mar. 2007 Rev. 1. 4 18 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Mechanical Dimensions SOT-23-3 Unit: mm(inch) AP2121 Mar. 2007 Rev. 1. 4 19 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) AP2121 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0 8 1.050(0.041) 1.250(0.049) 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Mar. 2007 Rev. 1. 4 20 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 |
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